Pulsed Metalorganic Chemical Vapor Deposition of High Quality AlN/GaN Superlattices for Intersubband Transitions
نویسندگان
چکیده
A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AlN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AlN/GaN SL designed for intersubband transition at a telecommunication wavelength of ~1.5 μm, is grown, and processed for intersubband (ISB) absorption measurements. Room temperature measurements show intersubband absorption centered at 1.49 μm. Minimal (n-type) silicon doping of the well is shown to be crucial for good ISB absorption characteristics. The potential to extend this technology into the far infrared and even the terahertz (THz) region is also discussed.
منابع مشابه
Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions
A pulsed metal-organic chemical vapor deposition technique is developed for the growth of high-quality AlN/GaN superlattices SLs with intersubband ISB transitions at optical communications wavelengths. Tunability of the AlN and GaN layers is demonstrated. Indium is shown to improve SL surface and structural quality. Capping thickness is shown to be crucial for ISB transition characteristics. Ef...
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